首页> 外国专利> CMOS IMAGE SENSOR INCLUDING PHOTOGATE STRUCTURE AND SENSING TRANSISTOR, OPERATING METHOD THEREOF, AND IMAGE PROCESSING SYSTEM INCLUDING SAME

CMOS IMAGE SENSOR INCLUDING PHOTOGATE STRUCTURE AND SENSING TRANSISTOR, OPERATING METHOD THEREOF, AND IMAGE PROCESSING SYSTEM INCLUDING SAME

机译:包括光电结构和传感晶体管的CMOS图像传感器,其操作方法以及包括相同结构的图像处理系统

摘要

A CMOS image sensor includes a pixel array comprising multiple pixels, wherein each pixel includes a photogate structure which is controlled based on a first gate voltage and a sensing transistor which includes a charge pocket region formed in a substrate region and is controlled based on a second gate voltage. The photogate structure collects charges generated in response to light incident upon the substrate region based on the first gate voltage. The sensing transistor controls at least one among the threshold voltage of the sensing transistor and the current flowing in the sensing transistor in response to charges transmitted from the photogate structure to the charge pocket region based on the difference between the first gate voltage and the second gate voltage.;COPYRIGHT KIPO 2014
机译:CMOS图像传感器包括:包括多个像素的像素阵列,其中每个像素包括:基于第一栅极电压控制的光电门结构;以及包括形成在基板区域中并基于第二像素控制的电荷袋区域的感测晶体管。栅极电压。光电栅极结构基于第一栅极电压收集响应于入射在基板区域上的光而产生的电荷。感测晶体管基于第一栅极电压和第二栅极之间的差,响应于从光电栅极结构传输到电荷袋区域的电荷,控制感测晶体管的阈值电压和在感测晶体管中流动的电流中的至少一个。电压。; COPYRIGHT KIPO 2014

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号