首页> 外国专利> CULTIVATION METHOD FOR LINGSHI MUSHROOM USING MULTI-LAYER FRAME STRUCTURE

CULTIVATION METHOD FOR LINGSHI MUSHROOM USING MULTI-LAYER FRAME STRUCTURE

机译:基于多层框架结构的灵石菇栽培方法

摘要

The present invention provides a method of cultivating Lingshi mushrooms using a multi-layer structure for cultivating Lingshi mushrooms by seeding and culturing Lingshi mushroom spawn. The method includes: a culturing preparation step of seeding Lingshi mushroom spawn into mediums such as a solid wood; a culturing step of culturing the spawn while keeping the mediums into which the Lingshi mushroom spawn is seeded in a room with a temperature of 20C to 28C; a bedding step of, when the culturing is completed by 85% to 95% in the culturing step, placing the mediums to a multi-layer structure including at least two layers installed in a cultivation facility; a pining management step of maintaining the temperature at 23C to 33C and supplying moisture at least once a day after the pining step before pilei are formed through initial pinning and complete pinning; and a final growing step of maintaining the temperature at 26C to 33C and supplying moisture at least once a day after the pinning management step until the Lingshi mushrooms with the pilei grow enough to harvest. Using the provided method of cultivating Lingshi mushrooms, it is possible to harvest Lingshi mushrooms twice or more than the existing method.
机译:本发明提供了通过使用多层结构来栽培灵石菇的方法,该多层结构用于通过播种和培养灵石菇产生物来栽培灵石菇。该方法包括:将灵石蘑菇产生物播种到诸如实木的介质中的培养准备步骤;培养步骤在保持温度为20℃至28℃的房间中保持灵芝蘑菇产生物的培养基的同时培养产生物;铺垫步骤,当在培养步骤中完成85%至95%的培养时,将培养基置于包括至少两层的多层结构中,所述多层结构安装在培养设备中;钉扎管理步骤,该步骤是在钉扎步骤之后,通过初始钉扎和完全钉扎,在形成绒头之前,每天至少将温度保持在23至33℃,并至少提供一次水分;最后一个生长步骤是将温度保持在26到33摄氏度,并在钉扎管理步骤之后每天至少提供一次水分,直到带有石堆的灵石蘑菇生长到足以收获为止。使用所提供的栽培灵石菇的方法,可以收获比现有方法两倍或更多的灵石菇。

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