首页> 外国专利> METHOD FOR MANUFACTURING POWER GENERATION ELEMENT IN HETEROJUNCTION STRUCTURE WITH IMPROVED POWER GENERATION EFFICIENCY AND POWER GENERATION ELEMENT MANUFACTURED THEREBY

METHOD FOR MANUFACTURING POWER GENERATION ELEMENT IN HETEROJUNCTION STRUCTURE WITH IMPROVED POWER GENERATION EFFICIENCY AND POWER GENERATION ELEMENT MANUFACTURED THEREBY

机译:改进了发电效率并制造了发电元件的异质结结构中的发电元件制造方法

摘要

The present invention relates to a method for manufacturing a power generation element in a heterojunction structure with improved power generation efficiency and a power generation element manufactured thereby. More specifically, provided is a method for manufacturing a power generation element comprising a step of growing semiconductor nanowires on the surface of a substrate (Step 1); a step of forming a PVDF film by coating the substrate, on which the semiconductor nanowires are grown in the step 1, with a PVDF dissolved solution using a spraying method (Step 2); a step of separating the semiconductor nanowires and PVDF film from the substrate (Step 3); and a step of depositing a negative electrode part and a positive electrode part on one side of the semiconductor nanowires and PVDF film separated in the step 3 and on the other side opposite to one side (Step 4). The method for manufacturing the power generation element according to the present invention drastically improves power generation efficiency by modifying an existing manufacturing method, which manufactures power generation nanoelement using only nanowires or β-PVDF, and making a heterojunction based on the nanowires and the β-PVDF. Also, a power generation element can be manufactured by removing nanowires and then increasing the contact area of a β-PVDF film and an electrode. When a power generation element is manufactured with only β-PVDF, power generation efficiency also can be drastically increased. Further, carbon nanotubes (CNT) can be added to β-PVDF, and thus power generation efficiency of the power generation element can be enhanced. According to the contents of the CNT, transparency of the element can be easily controlled.;COPYRIGHT KIPO 2014
机译:异质结结构的发电元件的制造方法及发电元件技术领域本发明涉及发电效率提高的异质结构造的发电元件的制造方法及由此制造的发电元件。更具体地,提供了一种用于制造发电元件的方法,该方法包括以下步骤:在基板的表面上生长半导体纳米线(步骤1);通过喷涂的PVDF溶解溶液覆盖在步骤1中生长有半导体纳米线的基板上形成PVDF膜的步骤(步骤2);从基板分离半导体纳米线和PVDF膜的步骤(步骤3);在步骤3中分离的半导体纳米线和PVDF膜的一侧以及与一侧相反的另一侧上沉积负电极部分和正电极部分的步骤(步骤4)。通过修改现有的制造方法,根据本发明的用于制造发电元件的方法极大地提高了发电效率,该制造方法仅使用纳米线或β-PVDF来制造发电纳米元件,并且基于纳米线和β形成异质结。 ; -PVDF。而且,可以通过去除纳米线,然后增加β-PVDF膜与电极的接触面积来制造发电元件。当仅用β-PVDF制造发电元件时,发电效率也可以大大提高。此外,可以将碳纳米管(CNT)添加到β-PVDF中,因此可以提高发电元件的发电效率。根据CNT的含量,可以轻松控制元素的透明度。; COPYRIGHT KIPO 2014

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