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SOLUTION FOR REMOVAL OF RESIDUE AFTER SEMICONDUCTOR DRY PROCESSING, AND RESIDUE REMOVAL METHOD USING THE SAME
SOLUTION FOR REMOVAL OF RESIDUE AFTER SEMICONDUCTOR DRY PROCESSING, AND RESIDUE REMOVAL METHOD USING THE SAME
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机译:半导体干法处理后残留物的清除方法以及使用该方法的残留物清除方法
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摘要
A residue-removing solution for removing residues present on semiconductor substrates after dry etching and/or ashing, the residue-removing solution comprising a Cu surface protective agent including: at least one compound selected from compounds (1), (2) and (3) each having as a basic skeleton a five-membered or six-membered heteratomic structure as defined herein; a compound capable of forming a complex or chelate with Cu (copper); and water. Further, the residue-removing solution has a pH of 4 to 9.
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