首页> 外国专利> METHOD FOR MANUFACTURING GAS SUPPLY STRUCTURE IN ELECTROSTATIC CHUCK APPARATUS, GAS SUPPLY STRUCTURE IN ELECTROSTATIC CHUCK APPARATUS, AND ELECTROSTATIC CHUCK APPARATUS

METHOD FOR MANUFACTURING GAS SUPPLY STRUCTURE IN ELECTROSTATIC CHUCK APPARATUS, GAS SUPPLY STRUCTURE IN ELECTROSTATIC CHUCK APPARATUS, AND ELECTROSTATIC CHUCK APPARATUS

机译:静电卡盘装置的气体供应结构,静电卡盘装置的气体供应结构和静电卡盘装置的制造方法

摘要

metal-based (1) on the upper surface side to the electrostatic chuck having a chuck device the method, provides a method of cooling gas injection amount of spraying material, such as non-uniform upset gas supply structure to prevent the contamination by the deposition of the screen. Supplying to the back surface of the metal based on the cooling gas supplied from the lower surface side of (1), metal-based (1) an upper insulating layer through the gas supply path (3) that is provided (6) a substrate (W) on the side adsorbed A method of manufacturing a gas supply structure for metal spraying the ceramic powder on the upper surface side of the base (1) to form a lower insulating layer (4) process, to form a suction electrode (5) step, and the upper insulating layer (6 ) prior to the step of forming a gas supply path to the outlet of the upper surface side of the lower insulating layer 4 is an adhesive containing a filler made of a material such as ceramic powder to be used for the formation of (8) with a metal base (1) (3a) to prevent, after the formation of the upper insulating layer 6, a hole toward the gas supply path outlet (3a) of the metal base (1), the gas supply through-hole 9 to form a gas supply structure communicating with the path (3) The manufacturing method. ;
机译:金属基(1)在具有吸盘装置的静电吸盘的上表面侧上,提供了一种冷却气体喷射量的喷涂材料的方法,例如不均匀的不均匀气体供应结构,以防止沉积造成的污染屏幕的基于从(1)的下表面侧供应的冷却气体,将金属基(1)通过设置有(6)衬底的气体供应路径(3)供应到金属基(1)上绝缘层。 (W)被吸附侧的制造气体供给结构的方法,该气体供给结构用于将陶瓷粉末金属喷涂在基体(1)的上表面侧上以形成下部绝缘层(4)的工艺,从而形成抽吸电极(5)步骤),并且在形成到下绝缘层4的上表面侧的出口的气体供应路径的步骤之前的上绝缘层(6)是粘合剂,该粘合剂包含由诸如陶瓷粉末之类的材料制成的填充剂。在形成上绝缘层6之后,用于与金属基底(1)(3a)一起形成(8),以防止朝向金属基底(1)的气体供应通道出口(3a)的孔。之后,通过气体供给通孔9形成与路径(3)连通的气体供给结构。 thod。 ;

著录项

  • 公开/公告号KR101384585B1

    专利类型

  • 公开/公告日2014-04-11

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20107007261

  • 申请日2008-09-03

  • 分类号H01L21/687;H01L21/683;H02N13/00;B23Q3/15;

  • 国家 KR

  • 入库时间 2022-08-21 15:41:07

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