S), using at least two of the half frequencies F 1, F 2 (F 2 F 1) having a half of the conductance value of the conductance value of the resonance frequency, the mass load, wherein the viscoelastic wherein the viscoelastic wherein and viscoelasticity wherein the calculated and calculates a film viscoelastic modulus (G ') (storage modulus) and G "(loss modulus). ;"/>