首页> 外国专利> Process for Preparation of Silicon Carbide-based Porous Filter Including Post Treatment of Nitration Reaction

Process for Preparation of Silicon Carbide-based Porous Filter Including Post Treatment of Nitration Reaction

机译:硝化反应后处理的碳化硅基多孔滤池的制备方法

摘要

The present invention relates to a method for producing a silicon carbide-based porous filters , extruding, drying , plugging and sintering process consists of a silicon (Si) and in the carbon (C) in the method of adding a sintering aid to form a connection portion between the silicon carbide particles by carrying out the sintering , re- annealing in a nitrogen atmosphere and the remaining after completion of the sintering provides a method for producing a silicon carbide-based porous filter comprising the process of the carbon nitride . ; in the porous filter manufacturing method according to the present invention , silicon (Si) and carbon (C) by the addition of a sintering aid and the sintering can be performed at low temperature , connection between the silicon carbide particles there are remaining in the silicon region can be produced very good strength and thermal shock resistance by being converted to silicon carbide-based porous filter nitride .
机译:本发明涉及一种生产碳化硅基多孔过滤器的方法,其挤出,干燥,​​堵塞和烧结过程由硅(Si)和碳(C)组成,该方法中添加了烧结助剂以形成碳化硅。通过进行烧结,在氮气氛中再退火以及在完成烧结之后的剩余部分之间的碳化硅颗粒之间的连接部分,提供了一种用于制造基于碳化硅的多孔过滤器的方法,该方法包括氮化碳的工艺。 ;在根据本发明的多孔过滤器的制造方法中,通过添加烧结助剂来硅(Si)和碳(C),并且可以在低温下进行烧结,在硅中残留有碳化硅颗粒之间的连接。通过将其转变为碳化硅基多孔氮化物过滤器,可以产生非常好的强度和抗热震性。

著录项

  • 公开/公告号KR101426524B1

    专利类型

  • 公开/公告日2014-08-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070003577

  • 发明设计人 서기식;한대곤;정연호;

    申请日2007-01-12

  • 分类号B01D39/00;

  • 国家 KR

  • 入库时间 2022-08-21 15:40:21

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