Methods for high figure-of-merit in nanostructured thermoelectric materials

摘要

The thermoelectric material with a high figure of merit ZT are described. In many cases, these thermoelectric material by increasing the phonon scattering is due to the interface in the example (for example, which appear to help to increase the ZT value of a thermoelectric material, the interface or grain / inclusions in the grain boundary of the boundary ) nano-size domain (e.g., a nano-crystals). ZT value of such a thermoelectric material is at least about 1, about 1.2, about 1.4, about 1.5, about 1.8, at least about 2 or more, and may even be higher than this. Such thermal materials may be prepared from the starting material by thermal generation of nanoparticles from the thermal starting materials, the elements may be made from a mechanically alloyed from nanoparticles, the nanoparticles are subsequently new bulk material can be consolidated by (e. g., through the hot press is derived DC). Non-limiting examples of the starting material is contained bismuth, lead and / or silicon-based material, or they are alloyed, elemental and / or, may be doped. Thermal various compositions and methods relating to the material side of the nanostructures (e.g., modulation doping) is also disclosed.