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SOFT DECODING OF HARD AND SOFT BITS READ FROM A FLASH MEMORY

机译:从闪存读取的硬和软位的软解码

摘要

to read the one or more flash memory cells, the threshold voltage is at least one integral reference voltage of each cell and at least one of a small number compared to the reference voltage. Based on this comparison, the estimated probability of each measurement value of each bit of the original bit pattern of each cell is calculated. This provides a plurality of the estimated probability measure. Based at least in part on at least two of the estimated probability of measurements, each of the original bit pattern of the cell is estimated. Preferably, the estimated probability measure is a bit pattern (s) are (collectively), for example, the first probability measure that is converted to a final probability measured under a limited set of candidate set of code words, such as. ; flash memory cells, the threshold voltage, a constant reference voltage, the reference voltage a small number, bit patterns, the probability measure, the original bit pattern, code words, the maximum post-probability estimation, maximum likelihood decoding
机译:为了读取一个或多个闪存单元,阈值电压是每个单元的至少一个积分参考电压,并且是与参考电压相比数量少的至少之一。基于该比较,计算每个单元的原始位模式的每个位的每个测量值的估计概率。这提供了多个估计的概率度量。至少部分地基于至少两个估计的测量概率,来估计单元的每个原始位模式。优选地,估计的概率度量是(集体地)例如第一概率度量,其被转换为例如在有限的一组候选码字集下测量的最终概率。 ;闪存单元,阈值电压,恒定参考电压,少量参考电压,位模式,概率测度,原始位模式,代码字,最大后概率估计,最大似然解码

著录项

  • 公开/公告号KR101458441B1

    专利类型

  • 公开/公告日2014-11-07

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20097009741

  • 申请日2007-12-19

  • 分类号G11C16/34;G11C16/26;

  • 国家 KR

  • 入库时间 2022-08-21 15:39:51

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