PROCESS CONTROL AND STABILIZATION SPEED POSLEDIFFUZIONNOGO (Diffusion of arsenic) COOLING low-voltage (~ 6V) silicon planar zener PRECISION STRUCTURES AND DEVICE FOR ITS IMPLEMENTATION

摘要

FIELD: process engineering.;SUBSTANCE: invention relates to solid-state microelectronics, particularly, to making of p-n-junctions in silicon by "sealed tube" tube, that is, evacuated sealed quartz ampoule. Here, after high-temperature diffusion annealing of said ampoule it is subjected to forced cooling by definite amount of water kept at definite temperature.;EFFECT: reproducible conditions of breakdown voltages in LV p-n-junctions, hence, higher yield of devices.;3 cl, 6 dwg