首页> 外国专利> PROCESSING OF ULTRA-DISPERSED POWDER ON THE BASIS OF SILICON DIOXIDE OR PRODUCTS MADE FROM THE ULTRA-DISPERSED POWDER ON THE BASIS OF SILICON DIOXIDE

PROCESSING OF ULTRA-DISPERSED POWDER ON THE BASIS OF SILICON DIOXIDE OR PRODUCTS MADE FROM THE ULTRA-DISPERSED POWDER ON THE BASIS OF SILICON DIOXIDE

机译:基于二氧化硅或由二氧化硅制成的超分散粉的产品的加工

摘要

1. A method of purifying an ultrafine silica-based powder or an article made from an ultrafine silica-based powder, said method comprising treating said ultrafine silicon dioxide-based powder or said article made from an ultrafine silicon dioxide-based powder at least , one of the following compounds: (i) a mixture of CO and Cl in a carrier gas, where the total concentration of CO and Cl in said mixture is more than 10 vol.% and the ratio of CO to Cl is from 0.25 to 5; (ii) CCl in a gas carrier, where the concentration of CCl is more than 1% by volume. 2. A method for purifying an ultrafine silica-based powder or an article made from an ultrafine silica-based powder according to claim 1, wherein the ratio of CO to Cl is from 0.5 to 2.3. A method for purifying an ultrafine silica-based powder or an article made from an ultrafine silica-based powder according to claim 1, wherein the ratio of CO to Cl is from 0.75 to 1.5. A method for purifying an ultrafine powder based on silicon dioxide or a product made from an ultrafine powder based on silicon dioxide according to claims 1 to 3, in which the treatment with a mixture of CO and Cl is carried out at a temperature of 900 to 1200 ° C. A method for purifying an ultrafine powder based on silicon dioxide or an article made from an ultrafine powder based on silicon dioxide according to claim 4, wherein the treatment with a mixture of CO and Cl is carried out at a temperature from 1000 to 1200 ° C. Method for cleaning ultrafine powder based on silicon dioxide or a product made from ultrafine powder
机译:1.一种纯化超细二氧化硅基粉末或由该超细二氧化硅基粉末制成的制品的方法,所述方法包括至少处理所述超细二氧化硅基粉末或由所述超细二氧化硅基粉末制成的制品,以下化合物之一:(i)载气中CO和Cl的混合物,其中所述混合物中CO和Cl的总浓度大于10 vol。%,CO与Cl的比率为0.25至5 ; (ii)气体载体中的CCl,其中CCl的浓度按体积计大于1%。 2.根据权利要求1的提纯超细二氧化硅基粉末或由超细二氧化硅基粉末制成的制品的方法,其中CO与Cl的比例为0.5至2.3。 2.根据权利要求1的提纯超细二氧化硅基粉末或由超细二氧化硅基粉末制成的制品的方法,其中CO与Cl的比例为0.75至1.5。 4.根据权利要求1至3所述的纯化基于二氧化硅的超细粉末或由基于二氧化硅的超细粉末制得的产物的方法,其中用CO和Cl的混合物在900至200℃的温度下进行处理。 5.根据权利要求4的提纯基于二氧化硅的超细粉末或由基于二氧化硅的超细粉末制成的制品的方法,其中用CO和Cl的混合物的处理在1000℃的温度下进行。到1200°C。清洗基于二氧化硅的超细粉末或由超细粉末制成的产品的方法

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