首页> 外国专利> Semiconductor detectors REGISTRATION FOR ACCOMPANYING neutrons charged particles in neutron generator with static vacuum

Semiconductor detectors REGISTRATION FOR ACCOMPANYING neutrons charged particles in neutron generator with static vacuum

机译:半导体检测器配准中子发生器中具有静真空的中子带电粒子的配准

摘要

The invention relates to the field of nuclear physics and can be used for registration related neutrons charged particles in a neutron generator, small diameter static (neotkachivaemym) vacuum. The detector for registration related neutrons charged particles in the neutron generator with a static vacuum, comprising a semiconductor detection element arranged in a dielectric body, closed from both the flow of charged particles and on the opposite side of the metal layers are electrically connected to the collector, wherein the dielectric housing is made of a vacuum tight material with a gas desorption capacity of not more than 5 × 10 -8 mbar · cm -2 · s -1, the recording element is formed as heterostructures uktury comprising a substrate of silicon carbide type n + 6H-SiC, on which is grown an epitaxial layer of silicon carbide-type n-6H-SiC, provided on the opposite side of the substrate layer in a rectifying Schottky barrier. Increased radiation resistance of the semiconductor detector and neutron detection efficiency accompanying charged particles.
机译:本发明涉及核物理领域,可用于中子发生器,小直径静态(neotkachivaemym)真空中配准相关中子带电粒子。用于将中子发生器中的相关中子带电粒子配准到静态真空的探测器,包括布置在介电体中的半导体检测元件,该半导体检测元件与带电粒子流都处于关闭状态,并且在金属层的相对侧均与该探测器电连接。集电器,其中电介质壳体由不透气的材料制成,其气体解吸能力不超过5×10 -8 mbar·cm -2 ·s -1,记录元件形成为异质结构,包括碳化硅类型为n + 6H-SiC的衬底,并在其上生长了碳化硅类型为n-的外延层6H-SiC,设置在整流肖特基势垒中的衬底层的相反侧。半导体检测器的辐射电阻增加,伴随带电粒子的中子检测效率提高。

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