TARGET FOR TUNING AND DETERMINATION OF PARAMETERS OF OPTICAL-ELECTRONIC SYSTEMS WITH MATRIX PHOTODETECTING DEVICES AND METHOD OF ITS USAGE

摘要

FIELD: measurement equipment.;SUBSTANCE: target comprises rectangular narrow strokes arranged in parallel in a row N_vch, the width of which b_Vch is equal to the distance between them and is determined based on the following expression: b_Vch=F/f_0*(m+δ), where: F - focus distance of a collimator; f₀ - focus distance of a lens of the optic-electronic system (OES); m - size of a pixel of a matrix photodetecting device (MPDD); δ - a value, which is less than the size of the pixel multiple times and is equal: 0.01_*mδ0.1_*m. The number of narrow strokes N_vch≥is 2m/δ, and their height is h≥F/f_0*5m. The target comprises at least one wide stroke arranged on the line of narrow strokes N_vch at its edges, such as N_Nch along the height equal to the height of narrow strokes N_vch, and along the width B_nCh=(5…10)_*b_Vch. The method includes formation of an actual image of the target in the plane of the MPDD, reproduction of a signal from narrow and wide strokes, according to which they perform mutual matching of the MPPD plane, the focal plane of the OES lens and the plane of the actual image of the target. The image from narrow and wide strokes is aligned along the direction of the line of MPPD pixels. They measure characteristics of the signal from narrow and wide strokes and determine the quality of OES tuning and its parameters.;EFFECT: provision of quality tuning of OES with MPPD, determination of its focus distance, its variation with higher accuracy and determination of temperature resolution.;7 cl, 6 dwg