INTEGRATED INJECTION LASER WITH RADIATION FREQUENCY MODULATION BY CONTROLLED RELOCATION OF AMPLITUDE MAXIMUM OF WAVE FUNCTIONS OF CHARGE CARRIERS

摘要

FIELD: physics, optics.;SUBSTANCE: invention relates to quantum electronic engineering. The integrated injection laser includes an upper control region of second conductivity type which adjoins an upper waveguide layer, a lower control region of second conductivity type which adjoins a lower waveguide layer, a lower control region of first conductivity type which adjoins a substrate at the top and the lower control region of second conductivity type at the bottom to form a p-n junction, an ohmic contact to the lower control region of first conductivity type, a control metal contact adjoining the upper control region of second conductivity type at the top to form a Schottky junction. The lower boundary of the conduction band of the lower waveguide layer lies below the lower boundary of the conduction band of the quantum-size active region and higher than the lower boundary of the conduction band of the upper waveguide layer. The upper boundary of the valence band of the lower waveguide layer lies below the upper boundary of the valence band of the active region and higher than the upper boundary of the valence band of the upper waveguide layer.;EFFECT: faster operation of the device.;3 dwg