method u044du043bu0435u043au0442u0440u043eu044du0440u043eu0437u0438u043eu043du043du043eu0439 processing metal surface including the low-voltage pulse discharge between the electrode and the surface of the u0431u0430u0442u044bu0432u0430u0435u043cu043eu0433u043e products and movement level on the processed surface with an external magnetic field, and the fact that, in order to increase the manufacture u0435u043bu044cu043du043eu0441u0442u0438 and reduce the roughness of the surface u0443u043fu0440u043eu0447u043du0435u043du0438u0438 materialshaving the melting point in the range (650 - 1500) oc.the primary voltage to the electrodes in the interval mrow mfrac mrow i u / i i p / i i r / i / mrow mrow 30 mn / mn / mrow / mfrac mo mo + / 20 mn / mn mrow mo / mo mrow mfrac i b / i mrow mi m / i i m / i / mrow / mfrac / mrow mo / mo / mrow u22c5 mo / mo i i / i mo / mo i u / i mo / mo mfrac mrow mi in the / i i p / i i r / i / mrow mn 6 / mn / mfrac mo + / momn 167 / mn mrow mo / mo mrow mfrac i b / i mrow mi m / i i m / i / mrow / mfrac / mrow mo mo / / mrow i i / i mo , / mo / mrow zone bit and having to deal with the surface plasma processed in the plasma direction orthogonal to the limit to the value mrow i n / i mo mo = / i several / i mfrac mi l / i mrow i u03bd / i i u03c4 / i / mrow / mfrac mo , / / mrow mo ;where is the value that the voltage Uu043fu0440 u043cu0435u0436u044du043bu0435u043au0442u0440u043eu0434u043du043eu0433u043e interval equal to 1 mm.;l is the length of time u043cu0435u0436u044du043bu0435u043au0442u0440u043eu0434u043du043eu0433u043e, mm;;u03bd - the speed of bit of plasma.;u03c4 - the level;;several - proportionality factor, changing within (0.5 - 10) mm.
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机译：方法 u044d u043b u0435 u043a u0442 u0440 u043e u044d u0440 u043e u0437 u0438 u043e u043d u043d u043d u043d u043e u0439处理金属表面，包括电极与电极之间的低压脉冲放电 u0431 u0430 u0442 u044b u0432 u0430 u0435 u043c u043e u0433 u043e产品的表面和带有外部磁场的加工表面的运动水平，以及为了增加制造的事实 u0435 u043b u044c u043d u043e u0441 u0442 u0438并降低表面粗糙度 u0443 u043f u0440 u043e u0447 u043d u0435 u043d u0438 u0438熔点在此范围内的材料（650-1500）oc在间隔 u < / i> p < / i> r < / i /修剪修剪> > 30百万 / mn> < /修剪 / mfrac mo mo> + < /> > 2,000万 / mn mrow mo> < / mo mrow mfrac> b < / i mrow mi> m < / i> m < / i / mro w / mfrac> < / mrow> < / mo> < / mrow> > u22c5 mo / mo> i < / i u < / i 在< / i> p < / i> r < / i> < / mrow> 6 < / mn> < / mfrac> + < /> 167 < / mn> < / mo> > 修剪mfrac> b < / i 修剪mi> m < / i> m < / i> < /修剪> < / mfrac / mrow mo mo> < /> < / mrow> i < / i> ，< / mo> < / mrow>区域位，并且必须处理在垂直于极限mrow的等离子方向上处理的表面等离子> i> n < / i> = < /> 几个< / i> l < / i> u03bd < / i> u03c4 < / i> < / mrow> < / mfrac> ，< /> < / mrow mo>;哪里是电压U u043f u0440 u043c u0435 u0436 u044d u043b u0435 u043a u0442 u0440 u043e u0434 u043d u043e u0433 u043e间隔等于1毫米。 ; u03bd-等离子的比特速度。 u03c4-电平;;几个-比例因子，在（0.5-10）mm范围内变化。
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