Method for structuring material in semiconductor structure for forming e.g. tri-gate-transistors in structure during manufacturing integrated circuit, involves selective etching of exposed part of material relative to another material

摘要

The method involves forming a structural element on a first material. Spacer elements (107) are formed from a second material adjacent to the structural element. A third material above the structural element and a substrate (101) is separated. A semiconductor structure (100) is planarized. The second material is selective etched relative to the third material according to the planarization. A part of the first material covered by the spacer elements is exposed. The exposed part is selective etched relative to the third material according to selective etching of the second material. The substrate is a silicon wafer.