Method for manufacturing sensitive element of infra-red sensor, from indium antimonide wafer, used as thermal detector in binocular, involves etching surface to depth greater than thickness, and covering surface by passivation layer

摘要

The method involves diffusing a doping agent, on a surface (2) of a wafer (1), with a thickness (e) to be virtually identical on its entire surface, where the thickness of the doping agent is 0.5 micrometer. The surface is etched to a depth (p) greater than the thickness, by soft etching process so as to form a matrix of separate doped zones (3). The surface is covered by a passivation layer (6). The surface is etched to create separation channels (4) of the doped zones, where the channels include sidewalls (5) converging toward a bottom of the channels.