TRANSIENT SIMULATION MODEL FOR A PHOTODIODE

摘要

The invention relates to a simulation model for a P-I-N junction photodiode, comprising a diode model (30) characterizing the electrical behavior of the photodiode; an input for applying a fictitious electrical signal representing the optical power (PIN) received by the photodiode; a current source model (Iphot) having a transient response to a variation of the optical power signal, proportional to the sum of: • a first first-order transient response having a time constant proportional to the transit time (τDRIFT) of carriers in a depletion zone of the junction, and • a second first-order transient response having a time constant proportional to the diffusion time (TDIFF) of carriers out of the depletion zone, weighted respectively by the length (LD) of the depletion zone and the length (LN) of the junction outside the depletion zone.