Method for manufacturing radially bonded semiconductor nanostructures at low temperatures, radial bonded devices, and solar cells comprising radially bonded nanostructures

摘要

A method of fabricating at least one radial electronic junction semiconductor nanostructure on a substrate (1) at a low temperature, the method comprising: a) a metal capable of electronically doping a first semiconductor material Forming an assemblage (2) on a substrate (1), and b) vapor-doped doped semiconductor nanowires (2) in the presence of one or more non-dopant precursor gases of a first semiconductor material. The substrate (1) is heated to a temperature at which the metal assembly is in a liquid phase, and the vapor phase growth of the doped semiconductor nanowire (2) is catalyzed by the metal assembly; c) passivating the residual metal assemblage; and d) chemically depositing at least one thin layer of the second semiconductor material in the presence of one or more precursor gases and one dopant gas. , Nanowire , And forming at least one radially electronic junction nanostructure between at least one doped thin layer. The present invention also relates to a solar cell comprising the plurality of radial electron junction nanostructures. [Selection] Figure 5