NU-type and PI-type vanadium-compensated SISiC single crystal and the crystal growth method of

摘要

In the crystal growing apparatus and method, the polycrystalline raw material and the seed crystal are introduced into the growth environment comprising a growth crucible disposed inside the furnace chamber. In the presence of a first sublimation growth pressure, the raw material is sublimed in the presence of a first gas flow through it to be deposited on the seed crystal, a single crystal is allowed to sublimation growth on a seed crystal It is. Here, the flow of the first gas comprises a reactive component which removes the background impurities from the growth environment reacts with background impurities in the donor and / or acceptor during Hua growth. Subsequently, the presence of a second sublimation growth pressure, and including a dopant vapor to deposit the raw material is sublimed in the presence of a second gas stream containing no the reactive components on the seed crystal through a single crystal is sublimated grown on seed crystal. .BACKGROUND 4