CMOS image sensor pixel readout circuit structure and the pixel structure.

摘要

As for this invention, as for read-out circuit structure, the operational amplifier and, the 1st capacitor and the switch and the variable gain amplifier which includes with the 2nd capacitor are included in regard to CMOS image sensor pixel read-out circuit structure and pixel structure, one entry transistor among the aforementioned operational amplifiers is the read-out transistor of the CMOS image sensor pixel electrolysis cell. It is possible, does not exert influence on picture quality while transferring, to raise sensitivity, signal-noise ratio and the dynamic range, it is possible to implement gain preparation. Choice figure Drawing 2