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Plasma generation source, sputtering apparatus, neutral particle beam generation source, and thin film deposition system

机译:等离子体产生源,溅射设备,中性粒子束产生源和薄膜沉积系统

摘要

The present invention is about plasma generation source and a thing that is in its application and it is for getting high quality thin film by generating even high density plasma in high vacuum and like this plasma generation source applying like this plasma generation source to sputtering system, neutral particle beam source, thin film deposition system combining sputtering system and neutral particle beam source, According to the present invention, it generates plasma by using microwave through the microwave irradiating equipment and magnetic field by more than one pair of the belt type magnets and above goal can be accomplished maximizing plasma confinement effect by inducing electron returning trajectory in accordance with above continuous structure on belt type magnet.
机译:本发明涉及等离子体产生源及其应用,其用于通过在高真空中产生甚至高密度的等离子体来获得高质量的薄膜,并且像该等离子体产生源一样,将该等离子体产生源应用于溅射系统,中性粒子束源,结合溅射系统和中性粒子束源的薄膜沉积系统,根据本发明,利用微波通过微波辐照设备并通过多于一对带式磁体及以上的磁场产生等离子体根据上述带式磁体上的连续结构,通过诱导电子返回轨迹,可以实现最大化等离子体约束效果的目的。

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