Multifrequency sputtering to enhance the deposition rate and growth kinetics of dielectric materials

摘要

A method of sputter depositing a dielectric thin film includes providing a substrate on a substrate pedestal in a process chamber, positioning the substrate against a sputter target, a first RF frequency from a first power source, and a second Simultaneously applying a second RF frequency from a power source to the sputter target and forming a plasma between the substrate and the sputter target in the process chamber to sputter the sputter target; The first RF frequency is less than the second RF frequency, the first RF frequency is selected to control the ion energy of the plasma, and the second RF frequency is selected to control the ion density of the plasma Is done. The surface self-bias in the process chamber can be selected, which is made possible by connecting a blocking capacitor between the substrate pedestal and ground.