spin injection electrode structure and spin transport device using the same

摘要

The present invention spin injection electrode which enables a highly efficient spin injection into the semiconductor providing a structure, the spin transport device using the same. As A material constituting the tunnel barrier layer, the use of aluminum oxide containing -phase. In addition, it will form a protective film on the outer periphery of the tunnel barrier layer. Thereby, it is possible to obtain crystals inside and bonding fewer defects at the interface quality spin injection electrode structures, efficient spin injection into the semiconductor becomes feasible, provide spin transport device high output characteristics can be obtained at room temperature it can. .BACKGROUND 2