首页> 外国专利> A method for producing high-purity lanthanum, high-purity lanthanum, metal gate film mainly the sputtering target and high purity lantern made of a high-purity lanthanum

A method for producing high-purity lanthanum, high-purity lanthanum, metal gate film mainly the sputtering target and high purity lantern made of a high-purity lanthanum

机译:一种高纯度镧,高纯度镧,以溅射靶为主要成分的金属栅极膜以及由高纯度镧制成的高纯度提灯的制造方法

摘要

[Abstract] A high-purity lanthanum, is the purity excluding rare-earth elements and gas components is above 5N, a high-purity lanthanum α ray count and wherein the at 0.001cph / cm 2 or less. The raw material purity of less coarse lanthanum metal 4N excluding gas components, and the molten salt electrolysis at a bath temperature of 450~700 ° C to obtain a lanthanum crystals, then the lantern crystals, after desalted, and electron beam melting and to remove the volatiles is equal to or higher than the purity is 5N excluding rare earth elements and gas components, method for producing a high-purity lanthanum α ray count, characterized in that the 0.001cph / cm 2 or less. Low α-ray high-purity lanthanum, it is an object of the present invention to provide an efficient and stable technology that can be provided a thin film for metal gate mainly composed of sputtering target and high purity material lantern made of a high-purity material lantern. .BACKGROUND
机译:[摘要]高纯镧,是指不包括稀土元素且气体成分在5N以上的纯度,高纯镧α射线计数,且在0.001cph / cm 2 以下。原料纯度较低的粗金属镧4N除气体成分外,并在450〜700°C的浴温下电解熔融盐,得到镧晶体,然后将灯笼晶体脱盐,然后电子束熔化并除去除去稀土元素和气体成分,挥发物为5N以上的高纯度镧α射线计数法,其特征在于,0.001cph / cm 2 以下。低α射线高纯度镧,本发明的目的是提供一种有效且稳定的技术,其可以提供主要由溅射靶和由高纯度制成的高纯度材料提灯组成的金属栅用薄膜。灯笼。 。背景

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