PRODUCTION METHOD FOR ZINC OXIDE HAVING IMPROVED POWER FACTOR DUE TO INCREASED GALLIUM DOPING

摘要

The present invention relates to polycrystalline gallium-doped zinc oxide of which the power factor is improved due to increased gallium doping of same. Despite having a high carrier concentration, the Seebeck coefficient of Zn_0.985Ga_0.015O is higher than that of Zn_0.990Ga_0.010O, and this arises because of the effect of the density-of-states (DOS) effective mass. A steady increase in compression stress following gallium substitution occurs in the base portion of the conduction band DOS. The solubility limit of gallium in the zinc oxide matrix is increased because a low firing temperature accelerates chemical compression. Single phase n-type Zn_0.985Ga_0.015O exhibits a power factor of 12.5 μWcm⁻¹K⁻².