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RECESSED ANTIFERROMAGNETIC DESIGN WITH ANTIPARALLEL PINNED STITCH LAYERS FOR IMPROVED PINNING FIELD
RECESSED ANTIFERROMAGNETIC DESIGN WITH ANTIPARALLEL PINNED STITCH LAYERS FOR IMPROVED PINNING FIELD
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机译:带有反平行钉缝层的反铁磁设计,用于改进钉扎场
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摘要
In one general embodiment, a device includes an antiferromagnetic layer; a first stitch layer exchange coupled with the antiferromagnetic layer, the first stitch layer having a magnetic orientation substantially parallel to a magnetic orientation of the antiferromagnetic layer; a second stitch layer exchange coupled with the first stitch layer and having a magnetic orientation substantially antiparallel to the magnetic orientation of the first stitch layer; a pinned layer structure exchange coupled with the second stitch layer; a free layer; and a spacer layer between the free layer and the pinned layer structure. An end of the antiferromagnetic layer facing a sensing face of the device is recessed from the sensing face.
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