METHOD AND SYSTEM TO CONTROL POLISH RATE VARIATION INTRODUCED BY DEVICE DENSITY DIFFERENCES

摘要

An embodiment includes forming a first film over first and second portions of a SOC, the first portion including a first density of structures and the second portion including a second density of structures with the first density being denser than the second density; forming a second film over the first film; polishing the second film to remove some of the second film and form (a) a first section of the second film between sections of the first film located over the first portion, and (b) a second section of the second film between sections of the second film located over the second portion; etching the first film over the first and second portions and etching the first and second sections of the second film; and polishing the first film to expose top surfaces of the structures of the first and second portions. Other embodiments are described herein.