首页> 外国专利> VERTICAL CAVITY SURFACE EMITTING LASERS WITH SILICON-ON-INSULATOR HIGH CONTRAST GRATING

VERTICAL CAVITY SURFACE EMITTING LASERS WITH SILICON-ON-INSULATOR HIGH CONTRAST GRATING

机译:绝缘体上硅高对比度光栅的垂直腔面发射激光

摘要

A surface emitting laser apparatus is formed using a patterned silicon-on-insulator (SOI)-like substrate which is patterned with a buried sub-wavelength high contrast grating and adapted for bonding of a half-VCSEL device containing at least an active region and an upper mirror, to create a VCSEL. The wavelength of the VCSEL, or any individual VCSEL within an array of VCSEL devices, can be set in response to changing HCG characteristics of the lower mirror in the SOI-like substrate, or in the region above the lower mirror within the half-VCSEL. The inventive VCSEL device and fabrication method are beneficial for a number of application and devices.
机译:一种表面发射激光器装置是使用绝缘体上硅(SOI)样的衬底形成的,该衬底上用埋入的亚波长高对比度光栅进行了构图,并且适合于粘合至少包含有源区的半VCSEL器件和上镜,以创建VCSEL。可以响应于SOI状衬底中或下半VCSEL内下镜上方的区域中VCSEL或VCSEL器件阵列中任何单个VCSEL的波长进行设置。本发明的VCSEL器件和制造方法对于许多应用和器件是有益的。

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