首页> 外国专利> Conduction Cooled High Power Semiconductor Laser And Method For Fabricating The Same

Conduction Cooled High Power Semiconductor Laser And Method For Fabricating The Same

机译:传导冷却大功率半导体激光器及其制造方法

摘要

A conduction cooled high power semiconductor laser and a method for fabricating the same are provided. The conduction cooled high power semiconductor laser comprises a heat sink (2) and one or more semiconductor laser units (1). The semiconductor laser unit consists of a laser chip (3), a substrate (4) bonded to the laser chip for heat dissipation and electrical connection, and an insulation plate (5) soldered to the substrate for insulation and heat dissipation. The semiconductor laser unit is soldered on the heat sink with the insulation plate therebetween. The semiconductor laser unit may be tested, aged, and screened in advance, and thereby the yield of the lasers can be improved and the manufacturing costs can be reduced. The laser has desirable heat dissipation performance, high reliability, and is applicable to high temperature and other complex and volatile environments.
机译:提供了一种传导冷却的高功率半导体激光器及其制造方法。传导冷却的高功率半导体激光器包括散热器( 2 )和一个或多个半导体激光器单元( 1 )。半导体激光器单元由激光器芯片( 3 ),粘结到激光器芯片以进行散热和电连接的基板( 4 )和绝缘板(< B> 5 )焊接到基板上以绝缘和散热。半导体激光器单元通过其间的绝缘板焊接在散热器上。可以预先测试,老化和筛选半导体激光器单元,从而可以提高激光器的产量并且可以降低制造成本。该激光器具有理想的散热性能,高可靠性,并且适用于高温以及其他复杂和易挥发的环境。

著录项

  • 公开/公告号US2015030044A1

    专利类型

  • 公开/公告日2015-01-29

    原文格式PDF

  • 申请/专利权人 JINGWEI WANG;XINGSHENG LIU;

    申请/专利号US201214367372

  • 发明设计人 JINGWEI WANG;XINGSHENG LIU;

    申请日2012-11-22

  • 分类号H01S5/024;H01S5/022;H01S5/40;

  • 国家 US

  • 入库时间 2022-08-21 15:21:57

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