A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.
展开▼
机译：拉曼散射光增强装置，包括设置在光子晶体（ 20 ）中的波导，该光子晶体由半导体衬底制成，在该半导体衬底中形成孔（ 20 a ）形成。波导对于多个频率的入射光具有共振模式。一个谐振模式和另一谐振模式之间的频率差等于半导体基板的拉曼位移频率。相对于半导体衬底的晶面取向的波导形成方向被设定为最大化由两个共振模式的电磁场分布和半导体衬底的拉曼张量表示的拉曼转变概率。
展开▼
