In an overlay displacement amount measuring method according to an embodiment, a temperature distribution of a substrate during a pattern forming process and a temperature distribution of the substrate during a measuring process for measuring a positional displacement amount between patterns on the substrate by an electron microscope are measured. An expansion/contraction amount of the substrate between two processes is calculated based upon the two temperature distributions, and the positional displacement amount is corrected based upon the expansion/contraction amount. An overlay displacement amount between the pattern and a pattern formed on a layer different from the pattern is measured by an optical measuring apparatus, and the overlay displacement amount is corrected based upon the corrected positional displacement amount.
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