首页> 外国专利> Wet etchants including at least one fluorosurfactant etch blocker

Wet etchants including at least one fluorosurfactant etch blocker

机译:湿蚀刻剂,包括至少一种含氟表面活性剂蚀刻阻滞剂

摘要

Methods for preventing isotropic removal of materials at corners faulted by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses of a film or other structure at undesirably high rates are also disclosed.
机译:防止各向同性去除膜或其他结构中的接缝,锁孔和其他异常所导致的拐角处的材料的方法,包括使用蚀刻阻挡剂覆盖或涂覆此类拐角。这种覆盖物或涂层防止拐角暴露于各向同性蚀刻溶液和清洁溶液,因此,与在结构或薄膜的较光滑区域相比,防止拐角处的材料去除率更高。还公开了包括湿蚀刻剂和清洁溶液的溶液,其包括至少一种类型的蚀刻阻挡剂,以及用于防止在由膜或其他结构中的接缝,缝隙或凹陷形成的拐角处的材料去除速率更高的系统。还公开了一种半导体器件结构,其中设置有蚀刻阻挡剂以防止各向同性蚀刻剂以不希望的高速率从膜或其他结构的接缝,缝隙或凹部的角去除材料。

著录项

  • 公开/公告号US9175217B2

    专利类型

  • 公开/公告日2015-11-03

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201414253005

  • 发明设计人 NISHANT SINHA;J. NEIL GREELEY;

    申请日2014-04-15

  • 分类号C11D1/02;C11D1/83;C11D7/28;C11D7/30;C09K13/08;H01L21/3105;H01L21/311;C09K13/06;

  • 国家 US

  • 入库时间 2022-08-21 15:20:27

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