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Methods and devices for avoiding lower page corruption in data storage devices

机译:避免数据存储设备中的较低页面损坏的方法和设备

摘要

A data storage device may comprise a plurality of Multi-Level Cell (MLC) non-volatile memory devices comprising a plurality of lower pages and a corresponding plurality of higher-order pages. A controller may be configured to write data to and read data from the plurality of lower pages and the corresponding plurality of higher-order pages. A buffer may be coupled to the controller, which may be configured to accumulate data to be written to the MLC non-volatile memory devices, allocate space in the buffer and write the accumulated data to the allocated space. At least a portion of the accumulated data may be written in a lower page of the MLC non-volatile memory devices and the space in the buffer that stores data written to the lower page may be de-allocated when all higher-order pages corresponding to the lower page have been written in the MLC non-volatile memory devices.
机译:数据存储设备可以包括多个多层单元(MLC)非易失性存储设备,其包括多个较低的页面和相应的多个较高的页面。控制器可以被配置为向多个较低页和对应的多个较高级页写入数据和从中读取数据。缓冲器可以耦合到控制器,该控制器可以被配置为累积要被写入MLC非易失性存储设备的数据,在缓冲器中分配空间并且将累积的数据写入所分配的空间。可以在MLC非易失性存储设备的较低页中写入至少一部分累积数据,并且当与之对应的所有高阶页都与下页已被写入MLC非易失性存储设备中。

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