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Structure and method to realize conformal doping in deep trench applications
Structure and method to realize conformal doping in deep trench applications
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机译:在深沟槽应用中实现共形掺杂的结构和方法
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摘要
The specification and drawings present a new method, ASIC and computer/software related product (e.g., a computer readable memory) are presented for realizing conformal doping in embedded deep trench applications in the ASIC. A common SOI substrate with intrinsic or low dopant concentration is used for manufacturing such ASICs comprising a logic area having MOSFETs utilizing, for example, ultra thin body and box technology and an eDRAM area having deep trench capacitors with the conformal doping.
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