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Semiconductor device and method of forming patterned repassivation openings between RDL and UBM to reduce adverse effects of electro-migration
Semiconductor device and method of forming patterned repassivation openings between RDL and UBM to reduce adverse effects of electro-migration
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机译:在RDL和UBM之间形成图案化的再钝化开口以减少电迁移的不利影响的半导体器件和方法
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摘要
A semiconductor device has a semiconductor wafer with a first conductive layer formed over a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A plurality of openings is formed in the second insulating layer in a bump formation area of the semiconductor wafer to expose the second conductive layer and reduce adverse effects of electro-migration. The openings are separated by portions of the second insulating layer. A UBM layer is formed over the openings in the second insulating layer in the bump formation area electrically connected to the second conductive layer. A bump is formed over the UBM layer.
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