首页>
外国专利>
Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition
Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition
展开▼
机译:可制造的亚3纳米钯间隙器件,用于固定电极隧穿识别
展开▼
页面导航
摘要
著录项
相似文献
摘要
A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nanogap.
展开▼