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Stress sensor for measuring mechanical stresses in a semiconductor chip and stress compensated hall sensor

机译：用于测量半导体芯片中机械应力的应力传感器和应力补偿霍尔传感器

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摘要

A stress sensor (1) for detecting mechanical stress in a semiconductor chip (2) has a Wheatstone bridge formed by four integrated resistors R₁to R₄, the resistors R₁and R₄being p-type resistors and the resistors R₂and R₃being n-type resistors.

机译：用于检测半导体芯片（ 2 ）中的机械应力的应力传感器（ 1 ）具有由四个集成电阻R _{1 组成的惠斯通电桥， R _{4 ，电阻器R _{1 和R _{4 是p型电阻器，电阻器R _{2 和R _{3 是n型电阻器。}}}}}} 展开▼

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公开/公告号US9016135B2

专利类型

公开/公告日2015-04-28

原文格式PDF

申请/专利权人 SAMUEL HUBER;ARNAUD LAVILLE;WOUTER LETEN;CHRISTIAN SCHOTT;
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申请/专利号US201213397803

发明设计人 SAMUEL HUBER;ARNAUD LAVILLE;CHRISTIAN SCHOTT;WOUTER LETEN;
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申请日2012-02-16

分类号G01L1/00;H01L27/14;G01R33/00;G01D3/036;G01L1/22;G01L5/16;

国家 US

入库时间 2022-08-21 15:18:32

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3. Stress sensor for measuring mechanical stresses in a semiconductor chip and stress compensated Hall sensor [P] . 欧洲知识产权局专利： EP2490036B1 . 2013-08-28

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4. Stress sensor for measuring mechanical stresses in a semiconductor chip and stress compensated Hall sensor [P] . 欧洲知识产权局专利： EP2490036A1 . 2012-08-22

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