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Polysilicon photodetector, methods and applications

机译:多晶硅光电探测器,方法和应用

摘要

A silicon photonic photodetector structure, a method for fabricating the silicon photonic photodetector structure and a method for operating a silicon photonic photodetector device that results from the photonic photodetector structure each use a strip waveguide optically coupled with a polysilicon material photodetector layer that may be contiguous with a semiconductor material slab to which is located and formed a pair of electrical contacts separated by the polysilicon material photodetector layer. Alternatively, the pair of electrical contacts may be located and formed upon separated locations of the polysilicon photodetector layer. Within the foregoing silicon photonic photodetector structure and related methods the polysilicon material photodetector layer includes defect states suitable for absorbing an optical signal from the strip waveguide and generating an electrical output signal using at least one of the electrical contacts when the optical signal includes a photon energy less than a band gap energy of a polysilicon material from which is comprised the polysilicon material photodetector layer. Alternatively, the silicon photonic photodetector structure may include appropriate photodetection circuitry. The silicon photonic photodetector structure and related methods avoid the use of germanium and indium phosphide-based materials.
机译:由光子光电探测器结构产生的硅光子光电探测器结构,制造该硅光子光电探测器结构的方法和操作硅光子光电探测器器件的方法均使用与多晶硅材料光探测器层光学耦合的带状波导,该多晶硅材料光探测器层可与之邻接半导体材料板,定位并形成由多晶硅材料光电探测器层隔开的一对电触点。或者,可以在多晶硅光电探测器层的分开的位置上定位并形成一对电触点。在前述硅光子光电探测器结构和相关方法中,多晶硅材料光电探测器层包括缺陷状态,该缺陷状态适合于从条形波导吸收光信号,并且当光信号包括光子能量时,使用至少一个电触点产生电输出信号。小于构成多晶硅材料光电探测器层的多晶硅材料的带隙能量。可替代地,硅光子光电检测器结构可以包括适当的光电检测电路。硅光子光电探测器结构和相关方法避免使用磷化铟和磷化铟基材料。

著录项

  • 公开/公告号US9153715B2

    专利类型

  • 公开/公告日2015-10-06

    原文格式PDF

  • 申请/专利权人 CORNELL UNIVERSITY;

    申请/专利号US201414512738

  • 发明设计人 MICHAL LIPSON;KYLE PRESTON;

    申请日2014-10-13

  • 分类号G02B6/26;H01L31/0232;G02B6/293;G02B6/12;H01L31/0352;H01L31/0368;H01L31/105;G01J1/42;H01L31/09;H01L31/18;G02B6/42;

  • 国家 US

  • 入库时间 2022-08-21 15:18:21

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