首页> 外国专利> A TUNABLE DISTRIBUTED VOLTAGE CONTROLLED OSCILLATOR FOR GENERATING HIGH FREQUENCY MICROWAVE SIGNALS

A TUNABLE DISTRIBUTED VOLTAGE CONTROLLED OSCILLATOR FOR GENERATING HIGH FREQUENCY MICROWAVE SIGNALS

机译:可调谐分布式电压控制振荡器,用于产生高频微波信号

摘要

This invention relates to a tunable distributed voltage controlled oscillator for generating high frequency microwave signals.According to the invention there is provided a tunable distributed voltage controlled oscillator for generating high frequency microwave signals, the oscillator comprising a plurality of stages of complimentary metal oxide semiconductor (CMOS) inverters in parallel configuration, each of the inverters comprising a p-metal oxide semiconductor field effect transistor (MOSFET) at the top and a n-metal oxide semiconductor field effect transistor (MOSFET) at the bottom with their gates connected to a supply voltage and to a gate transmission line and their drains connected to the supply voltage and to a drain transmission line, the drain transmission line and the gate transmission line being connected to each other through a feed back path, the drain transmission line and the gate transmission line each comprising a plurality of coplanar wave guides in series, the number of coplanar wave guide in each of the gate and drain transmission lines being greater than the number of stages of CMOS inverters by a factor of 1, the body of the p-MOSFET being inwardly directed and connected to a forward body bias voltage and the source of the p-MOSFET being connected to the supply voltage and the body of the n-MOSFET being outwardly directed and the body and source of the n-MOSFET being earthed, the gate transmission line further comprising a frequency collector.
机译:本发明涉及一种用于产生高频微波信号的可调分布电压控制振荡器。根据本发明,提供了一种用于产生高频微波信号的可调分布电压控制振荡器,该振荡器包括多级互补金属氧化物半导体( CMOS)逆变器为并联配置,每个逆变器的顶部都包括一个p-金属氧化物半导体场效应晶体管(MOSFET),底部包括一个n-金属氧化物半导体场效应晶体管(MOSFET),其栅极连接到电源电压和栅极传输线及其漏极连接到电源电压和漏极传输线,漏极传输线和栅极传输线通过反馈路径,漏极传输线和栅极传输线相互连接每条线都包括多个串联的共面波导,每个栅极和漏极传输线中的共面波导的mber比CMOS反相器的级数大1倍,p-MOSFET的主体向内指向并连接到正向主体偏置电压, p-MOSFET的源极连接到电源电压,并且n-MOSFET的主体向外指向,并且n-MOSFET的主体和源极接地,栅极传输线还包括集电器。

著录项

  • 公开/公告号IN269540B

    专利类型

  • 公开/公告日2015-10-30

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN81/MUM/2010

  • 发明设计人 BHATTACHARYYA KALYAN;

    申请日2010-01-11

  • 分类号H03B5/00;H03B1/00;

  • 国家 IN

  • 入库时间 2022-08-21 15:14:17

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