首页> 外国专利> METHOD FOR GROWING OF CUPRUM(I)PENTATIOPHOSPHATE(V) BROMIDE Cu6PS5Br MONOCRYSTALS BY DIRECTIONAL CRYSTALLIZATION FROM SMELT

METHOD FOR GROWING OF CUPRUM(I)PENTATIOPHOSPHATE(V) BROMIDE Cu6PS5Br MONOCRYSTALS BY DIRECTIONAL CRYSTALLIZATION FROM SMELT

机译:定向结晶法制备溴化五邻苯二甲酸铜(Cu6PS5Br)单晶的方法

摘要

The invention relates to inorganic chemistry and inorganic material science. A method for growing of cuprum(I)pentatiphosphate (V) bromide Cu6PS5Br monocrystals by directional crystallization from smelt comprises the step heating of vacuum-treated quarts ampoules containing starting components cooper, phosphorus, sulfur and pre-synthesized CuBr in the required stoichiometric ratio. The heating is carried out to maximal temperature and smelt is kept at this temperature during 24 hours with further growing of monocrystals, wherein maximal temperature of synthesis is 1330 K, and monocrystals are grown with rate of 3 mm/day in ampoules with the conical end. The proposed method is intuitive, fast and allows to produce monocrystalls of large sizes.
机译:本发明涉及无机化学和无机材料科学。一种通过从熔体中定向结晶生长溴化铜(I)五磷酸铜(V)Cu6PS5Br单晶的方法,该方法包括对真空处理过的夸脱安瓿进行分步加热,这些安瓿包含所需组分的铜,磷,硫和预合成的化学计量比的铜。进行加热至最高温度,并在24小时内将熔体保持在该温度下,并进一步生长单晶,其中合成的最高温度为1330 K,并且单晶以锥形末端在安瓿瓶中以3 mm /天的速度生长。所提出的方法直观,快速并且允许生产大尺寸的单晶。

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