METHOD FOR INCREASING THERMOELECTRIC FIGURE OF MERIT OF THE MATERIAL BASED ON THE COMPOUND OF NONATALY(I)HEXASELENOBISMUTHITE Tl9BiSe6

摘要

The invention relates to the field of semiconductor materials studies and can be used in the production process of the converters of thermal energy into electrical. The method includes thermal treatment of the compound of nonataly(i)hexaselenobismuthite Tl9BiSe6 and further hardening in ice water. The technical result: the maximum value of thermoelectric figure of merit equaled 2.3x10-3K-1 at a temperature of 565 K.