首页> 外国专利> Cr ALLOY AND SPUTTERING TARGET MATERIAL FOR MAGNETIC RECORDING, AND PERPENDICULAR MAGNETIC RECORDING MEDIUM USING THE SAME

Cr ALLOY AND SPUTTERING TARGET MATERIAL FOR MAGNETIC RECORDING, AND PERPENDICULAR MAGNETIC RECORDING MEDIUM USING THE SAME

机译:用于磁性记录的Cr合金和溅射靶材料,以及使用相同的垂直磁性记录介质

摘要

Provided, as an orientation control layer for an MgO film, is a BCC-structure Cr-based alloy having a lattice constant for which mismatch with a (001) surface of the MgO is minimal, and a fine and uniform crystal grain distribution. Also provided is a sputtering target material comprising the alloy. This alloy is a magnetic recording-use Cr alloy, the alloy including, in atomic percent, one or more types of elements selected from a group comprising Al, Ti, Mo, W, V, and Ru, in total, in amounts for which the value of a in formula (1) is greater than or equal to 2.919 Å and less than or equal to 3.037 Å, a3 = N/(MnAn) (1) [in the formula, a represents the lattice constant, N represents Avogadro's number, represents calculated density (g/cm3), m represents the number of elements existing within a unit cell, and A represents atomic weight]. The alloy also includes one or more types of elements selected from a group comprising B, C, P, Si and Sn so as to total 0.1 to 5%, and the remainder comprising Cr and unavoidable impurities.
机译:作为用于MgO膜的取向控制层,提供了具有与MgO的(001)表面的不匹配最小的晶格常数并且精细且均匀的晶粒分布的BCC结构的Cr基合金。还提供了包含合金的溅射靶材料。该合金是磁记录用Cr合金,该合金以原子百分比计包括选自Al,Ti,Mo,W,V和Ru的一种或多种元素的总量,该元素的量为式(1)中a的值大于或等于2.919Å且小于或等于3.037Å,a3 = N /(MnAn)(1)[式中,a表示晶格常数,N表示阿伏加德罗的表示计算的密度(g / cm 3),m表示晶胞内存在的元素数,A表示原子量]。该合金还包括一种或多种元素,其选自包括B,C,P,Si和Sn的组,以总计0.1至5%,其余包括Cr和不可避免的杂质。

著录项

  • 公开/公告号SG11201505973XA

    专利类型

  • 公开/公告日2015-08-28

    原文格式PDF

  • 申请/专利权人 SANYO SPECIAL STEEL CO. LTD.;

    申请/专利号SG20151105973X

  • 发明设计人 MATSUBARA NORIAKI;HAYASHI RYOJI;

    申请日2014-02-17

  • 分类号G11B5/738;C22C27/02;C22C27/04;C22C27/06;C23C14/34;G11B5/851;

  • 国家 SG

  • 入库时间 2022-08-21 15:12:33

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