Optical device comprising a photonic crystal based on GaInP without two-photon absorption

摘要

The device has a photonic crystal structure with a gallium arsenide substrate and a layer made of semiconductor material and locally having an array of features provided so as to form a resonant optical cavity. The material of the layer is constituted by gallium/indium/phosphorus alloy preventing exhibiting of two-photon absorption within an operating wavelength range of the device. A layer stack is provided at the substrate and formed by a gallium indium phosphide layer, a gallium arsenide sacrificial layer and the semiconductor layer.