Test device for testing a connective layer between wafer-shaped samples and test method for testing the connective layer

摘要

The method involves generating a layer thickness profile along a measuring track in defect region of compound layer (4), with blanked out reference arm (12) of the test device (1) and receiving a distance measurement profile on same measurement track with reference arm. A profile is generated using alternating scan measurement of layer thickness and distance between reference arm positions on same scan measuring track. The profile is compared with layer thickness profile and distance profile for classification of measured peak values as thickness readings or distance measurements.