首页> 外国专利> NICKEL ALLOY SPUTTERING TARGET, THIN Ni ALLOY FILM, AND NICKEL SILICIDE FILM

NICKEL ALLOY SPUTTERING TARGET, THIN Ni ALLOY FILM, AND NICKEL SILICIDE FILM

机译:镍合金溅射靶材,薄镍合金膜和镍硅化物膜

摘要

Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at%, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at%, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni-Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses.
机译:本发明提供一种Ni合金溅射靶,其含有5〜30原子%的Pt,和合计1〜5原子%的选自V,Al,Cr,Ti,Mo,Si中的1种以上的成分,其中,其余为镍和不可避免的杂质。本发明能够增加低通磁通量(PTF),这是具有高磁导率的Ni-Pt合金的缺点,增加了靶材的腐蚀面积,其由于磁性而趋于变小。场线在溅射期间局部地集中在靶的表面上,并且抑制了腐蚀被选择性地进行的部分和腐蚀不随腐蚀的进行而进展的部分之间的差异。

著录项

  • 公开/公告号EP2548994B1

    专利类型

  • 公开/公告日2015-11-04

    原文格式PDF

  • 申请/专利权人 JX NIPPON MINING & METALS CORP;

    申请/专利号EP20110756442

  • 发明设计人 YAMAKOSHI YASUHIRO;OHASHI KAZUMASA;

    申请日2011-03-18

  • 分类号C23C14/34;C22C19/03;C23C14/14;C22C5/04;

  • 国家 EP

  • 入库时间 2022-08-21 15:07:15

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