首页> 外国专利> LIGHT SENSORS AND SOURCES COMPRISING AT LEAST ONE MICROCAVITY WITH A LOCALIZED TAMM PLASMON MODE

LIGHT SENSORS AND SOURCES COMPRISING AT LEAST ONE MICROCAVITY WITH A LOCALIZED TAMM PLASMON MODE

机译:具有局部Tamm等离子体模式的至少一个微腔的光传感器和光源

摘要

Light sensor or source comprising: a STACK (EB) of dielectric or semiconductor films, comprising, in alternation, in what is called a vertical direction, high-refractive-index (n1) and low-refractive-index (n2) films forming an interference mirror or Bragg reflector and having a top high-refractive-index film (CS); at least one first metal pad (PM) deposited on or attached to said top film of the film stack so as to form a structure supporting a first Tamm plasmon mode spatially localized in at least one lateral direction perpendicular to said vertical direction; and at least one light detector or emitter (BQ, QW) arranged inside said film stack under said metal pad and at a depth corresponding to a local electric-field maximum of said Tamm plasmon mode, so as to detect or emit radiation having a wavelength λ resonant with said plasmon mode.
机译:光传感器或光源,包括:电介质或半导体薄膜的堆叠(EB),交替包括在垂直方向上的高折射率(n 1 )和低折射率折射率(n 2 )膜,形成干涉镜或布拉格反射器,并具有顶部高折射率膜(CS);至少一个第一金属焊盘(PM),其沉积或附着在所述薄膜叠层的所述顶部薄膜上,从而形成支撑第一Tamm等离子体激元模式的结构,所述第一Tamm等离子体激元模式在垂直于所述垂直方向的至少一个横向方向上空间定位;至少一个光检测器或发射器(BQ,QW),其布置在所述金属叠层下方的所述膜堆叠内,并且深度对应于所述Tamm等离子体激元模式的局部电场最大值,以检测或发射具有一定波长的辐射λ与所述等离子体激元模式共振。

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