GATE DRIVE CIRCUIT AND INVERTER SYSTEM HAVING GATE DRIVE CIRCUIT MOUNTED THEREIN

摘要

For the purpose of shortening a dead time in a semiconductor element gate drive circuit and an inverter system having the gate drive circuit mounted therein, a gate drive circuit (100U) of the present invention is provided with: a PWM drive signal generating circuit (110U); a gate resistor (120U); a differential amplifier circuit (130U) for performing differential amplification of a voltage applied to the gate resistor (120U); an RS-type flip-flop circuit (140U); a differential amplifier (150U) for performing differential amplification of an output voltage of the RS-type flip-flop circuit (140U); and an MOSFET (160U) that turns on/off by means of signals of the differential amplifier (150U). In the cases where a voltage applied to the gate resistor (120U) is detected during a period when the PWM signal is in the off-state, the MOSFET (160U) is turned on, and an upper arm MOSFET (SiC-MOSFET) (S1U) using SiC is driven to turn on.