HIGH-THROUGHPUT CONTINUOUS GAS-PHASE SYNTHESIS OF NANOWIRES WITH TUNABLE PROPERTIES

摘要

A method for forming wires, including providing catalytic seed particles suspended in a gas, providing gaseous precursors that comprise constituents of the wires to be formed and growing the wires from the catalytic seed particles. The wires may be grown in a temperature range between 425 and 525 C and may have a pure zincblende structure. The wires may be III-V semiconductor nanowires having a Group V terminated surface and a 111B crystal growth direction.