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Resonant transducer, manufacturing method therefor, and multi-layer structure for resonant transducer

机译:共振换能器,其制造方法以及共振换能器的多层结构

摘要

A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole, a second layer disposed over the first layer, a third layer covering the first layer and the second layer, and a projection extending from the second layer toward the resonator, the projection being spatially separated from the resonator, the projection, being separated from the first layer by a first gap, the second layer being separated from the first layer by a second gap, the first gap is communicated with the second gap.
机译:一种谐振换能器,包括:硅单晶衬底;布置在硅单晶衬底上方的硅单晶谐振器;由硅制成的壳体,其以间隙围绕谐振器,并与硅单晶衬底一起形成腔;激励模块。构造成激发谐振器,振动检测模块构造成检测谐振器的振动,第一层设置在腔室上方,第一层具有通孔,第二层设置在第一层上方,第三层覆盖第一层层和第二层以及从第二层向谐振器延伸的凸起,该凸起在空间上与谐振器分开,该凸起与第一层隔开第一间隙,第二层与第一层分开通过第二间隙,第一间隙与第二间隙连通。

著录项

  • 公开/公告号EP2829507A1

    专利类型

  • 公开/公告日2015-01-28

    原文格式PDF

  • 申请/专利权人 YOKOGAWA ELECTRIC CORPORATION;

    申请/专利号EP20140177608

  • 发明设计人 YOSHIDA TAKASHI;OKUDA SHUUJI;IWAI SHIGETO;

    申请日2014-07-18

  • 分类号B81B3/00;G01L1/10;H01L41/09;H03H3/007;H03H9/24;G01N29/12;

  • 国家 EP

  • 入库时间 2022-08-21 15:03:57

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